| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| IRFR5305TRLPBF | MOS(场效应管) |
INFINEON/英飞凌 |
TO-252 |
21+ |
887 |
|||
| STM32F412RET6 | 单片机MCU |
ST/意法 |
QFP64 |
21+ |
233 |
|||
| IPS021S | IC |
INFINEON/英飞凌 |
TO-263 |
14+ |
3000 |
|||
| AP9971GH | MOS(场效应管) |
APEC/富鼎 |
TO-252 |
20+ |
1750 |
|||
| IRFU5410PBF | P沟道MOS管 |
INFINEON/英飞凌 |
TO-251 |
15+ |
6000 |
|||
| AUIRFR6215TRL | MOS(场效应管) |
IR |
TO-252 |
16+ |
1375 |
|||
| CRSS028N10N | 低压MOS管 |
CRMICRO/华润微 |
TO-263 |
23+ |
4888 |
|||
| AOD256 | 其他被动元件 |
AOS/万代 |
TO-252 |
18+ |
2500 |
|||
| 30WQ10FNTRPBF | IC |
INFINEON/英飞凌 |
T0-252 |
20+ |
2000 |
|||
| HY14P10D | 三极管 |
HUAYI/华羿微 |
TO-252 |
21+ |
30000 |
|||
| BTN7960B | 驱动IC |
INFINEON/英飞凌 |
TO-263-7 |
19+ |
5888 |
|||
| NGD8201NT4G | MOS(场效应管) |
ONSEMI/安森美 |
TO-252 |
17+ |
1000 |
|||
| SMK1820D | AUK |
TO-252 |
11+ |
1983 |
||||
| MJD117T4 | MOS(场效应管) |
ST/意法 |
TO-252 |
19+ |
913 |
|||
| AP9435GH | MOS(场效应管) |
APEC/富鼎 |
TO-252 |
16+ |
2500 |
|||
| NGD8201ANT4G | MOS(场效应管) |
ONSEMI/安森美 |
TO-252 |
21+ |
1000 |
|||
| AP09N20H-HF | IC |
APEC/富鼎 |
T0-252 |
23+ |
6000 |
|||
| IRG4BC30K | IC |
INFINEON/英飞凌 |
TO-220 |
14+ |
12000 |
|||
| PA110BDA | MOS(场效应管) |
U-NIKC/旭康 |
TO-252 |
22+ |
50000 |
|||
| BTS452T | MOS(场效应管) |
INFINEON/英飞凌 |
TO-252-5 |
19+ |
26999 |
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